Hafnium oxide layer-enhanced single-walled carbon nanotube field-effect transistor-based sensing platform

文献类型： 外文期刊

第一作者： Meng, QingYi

作者： Meng, QingYi;Wei, Shuhua;Xu, Zhiyuan;Zhang, Jing;Yan, Jiang;Cao, Qiang;Xiao, Yushi;Liu, Na;Liu, Huan;Han, Gang;Wu, Lidong;Cao, Qiang;Xiao, Yushi;Liu, Na;Palov, Alexander P.

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关键词： Copper ions; Single-walled carbon nanotubes; poly(4-vinylpyridine); HfO2 layer; Field-effect transistor

期刊名称：ANALYTICA CHIMICA ACTA （ 影响因子：6.558； 五年影响因子：6.228 ）

ISSN： 0003-2670

年卷期： 2021 年 1147 卷

页码：

收录情况： SCI

摘要： Single-walled carbon nanotube-based field effect transistors (SWCHT-FETs) are ideal candidates for fabricating sensors and have been widely used for chemical sensing applications. SWCNT-FETs have low selectivity because of the environmentally sensitive electronic properties of SWCNTs, and SWCNT-FETs also show a high noise signal and poor sensitivity because of charge trapping from Si-OH hydration of the SiO2/Si substrate on the SWCNTs. Herein, poly (4-vinylpyridine) (P4VP) was used for noncovalent attachment to SWCNTs and selective binding to copper ions (Cu-2(+)). Importantly, the introduction of a hafnium-oxide (HfO2) layer through atomic layer deposition (ALD) overcame the charge trapping by SiO2 hydration and remarkably decreased the interference signal. The sensitivity of the P4VP/SWCHT/HfO2-FET sensor for Cu2+ was 7.9 mu A mu M-1, which was approximately 100 times higher than that of the P4VP/SWCHT/SiO2-FET sensor, and its limit of detection (LOD) was as low as 33 pmol L-1. Thus, the P4VP/SWCHT/HfO2-FET sensor is a promising candidate for the development of Cu2+-selective sensors and can be designed for the large-scale manufacturing of custom-made sensors in the future. (C) 2020 Elsevier B.V. All rights reserved.

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