Ge-assisted band engineering and efficiency enhancement in panchromatic Cu2ZnSnSe4 quantum dot-sensitized solar cells

文献类型： 外文期刊

第一作者： Wang, Xia

作者： Wang, Xia;Liu, Jialei;Kong, Jun

作者机构：

期刊名称：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS （ 影响因子：2.8； 五年影响因子：2.5 ）

ISSN： 0957-4522

年卷期： 2024 年 35 卷 1 期

页码：

收录情况： SCI

摘要： The environment friendly Cu2ZnSnSe4 (CZTSe) quantum dot-sensitized solar cells (QDSSCs) has become one of the most promising photovoltaic technologies due to its earth-abundant component and excellent photoelectric properties. However, the power conversion efficiency (PCE) is far behind other high-efficiency chalcogenide sensitizer systems and the main obstacle can be attributed to the inappropriate conduction band position relative to the TiO2 films. Herein, we developed a partial substitution approach to transform CZTSe QDs to Cu2Zn(SnxGe1-x)Se-4 (CZTGSe) QDs to resolve the CBM mismatch problem in QDSSCs. The CZTGSe QDs with narrow size distribution were synthesized via one-step method and Ge/(Ge+Sn) ratios were prepared. It is found that the introduction of Ge upshifts the CBM and broadens the band gap of CZTGSe QDs. Benefiting from the enhanced driving force of photoelectron injection and depressed charge recombination at TiO2/QDs/electrolyte interface, the short-circuit current (J(sc)) and open-circuit voltage (V-oc) of Ge-substituted QDSSCs are synchronously improved and the PCE of the 30% Ge content device finally is increased from 3.83 to 4.42%. This Ge-assisted band engineering approach solves the main obstacle for the further development of panchromatic CZTGSe QDSSCs.

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