Identification of molecular markers for resistance to Septoria nodorum blotch in durum wheat
文献类型: 外文期刊
作者: Cao, W 1 ; Hughes, GR 2 ; Ma, H 3 ; Dong, Z 4 ;
作者机构: 1.Agr & Agri Food Canada, Eastern Cereal Oilseed Res Ctr, Ottawa, ON K1A 0C6, Canada
2.Univ Saskatchewan, Dept Plant Sci, Saskatoon, SK S7N 5A8, Canada
3.Univ Minnesota, Dept Plant Pathol, St Paul, MN 55108 USA
4.Hebei Acad Agr & Forestry Sci, Inst Millet Crop, Shijiazhuang 050031, Hebei, Peoples R China
关键词: RAPD;SCAR;durum wheat;Stagonospora nodorum
期刊名称:THEORETICAL AND APPLIED GENETICS ( 影响因子:5.699; 五年影响因子:5.565 )
ISSN: 0040-5752
年卷期: 2001 年 102 卷 4 期
页码:
收录情况: SCI
摘要: The development of Septoria nodorum blotch-resistant cultivars has become a high priority objective for durum wheat breeding programs. Marker-assisted selection enables breeders to improve selection efficiency. In order to develop markers for resistance to Septoria nodorum blotch, a set of F-5 recombinant inbred lines, derived from the crosses Sceptre/3-6, Sceptre/S9-10 and Sceptre/S12-1, was developed based on the F-2-derived family method. Two RAPD markers, designated UBC521(650) and RC37(510), were detected by bulked segregant analysis and located approximately 15 and 13.1 centiMorgans (cM) from the resistance gene snbTM, respectively. A SCAR marker was also successfully developed for marker-assisted selection in breeding programs based on the sequence of the RAPD marker UBC521650. This is the first report of DNA-based markers linked to resistance for Septoria nodorum blotch in durum wheat.
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