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Epitaxial Growth of Multi-structure SnO2 by Chemical Vapor Deposition

文献类型: 外文期刊

作者: He, Dong-Ning 1 ; Hodgson, Peter 2 ; Gao, Wei-Min 2 ;

作者机构: 1.Chinese Acad Trop Agr Sci, Agr Prod Proc Res Inst, Zhanjiang 524001, Peoples R China

2.Deakin Univ, Inst Frontier Mat, Geelong, Vic 3217, Australia

3.Univ So Queensland, Fac Hlth Engn & Sci, CEEFC, Toowoomba, Qld 4350, Australia

关键词: Nanostructure;Heterostructure;Tin dioxide;Chemical vapor deposition;Carbothermal method

期刊名称:ACTA METALLURGICA SINICA-ENGLISH LETTERS ( 影响因子:2.755; 五年影响因子:2.279 )

ISSN: 1006-7191

年卷期: 2015 年 28 卷 7 期

页码:

收录情况: SCI

摘要: The nanowire and whisker heterostructures of tin dioxide were fabricated by the chemical vapor deposition technique. It was demonstrated that various structures of tin oxide can be obtained by controlling the thickness of gold layer and the partial pressure of source vapor at growing sites. 12.5 and 25 nm thicknesses are preferable for the epitaxial growth of nanowires and heterostructure through vapor liquid solid mechanism, respectively. The tin dioxide whiskers with core-shell structure were fabricated by vapor solid mechanism. Meanwhile, the influences of various factors on the tin dioxide growth are also discussed.

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