Defect-Mediated Exciton Localization and Relaxation in Monolayer MoS2

文献类型: 外文期刊

第一作者: Qu, Jiafan

作者: Qu, Jiafan;Zhao, Liang;Tan, Ruoxi;Shi, Hongyan;Gao, Bo;Wei, Yadong;Yang, Jianqun;Li, Xingji;Li, Weiqi;Shi, Hongyan;Gao, Bo;Zhang, Yueling

作者机构:

关键词: exciton localization; excitonrelaxation; defect; monolayer MoS2; C exciton

期刊名称:ACS NANO ( 影响因子:16.0; 五年影响因子:16.4 )

ISSN: 1936-0851

年卷期: 2024 年 18 卷 50 期

页码:

收录情况: SCI

摘要: Defects in chemical vapor deposition (CVD)-grown monolayer MoS2 are unavoidable and provide a powerful approach to creating single-photon emitters and quantum information systems through localizing excitons. However, insight into the A(-) trion and B/C exciton localization in monolayer MoS2 remains elusive. Here, we investigate defect-mediated A(-) trion and B/C exciton localization and relaxation in CVD-grown monolayer MoS2 samples via transient absorption spectroscopy. The localization rate of A(-) trions is five times faster than B excitons, which is attributed to the distinctions in the Bohr radius, diffusion rate, and multiphonon emission. Furthermore, we obtain unambiguous experimental evidence for the direct excitation of localized C excitons. Varying gap energy at the band-nesting region revealed by first-principles calculations explains the anomalous dependence of localized C exciton energy on delay time. We also find that the rapid dissociation of localized C excitons features a short characteristic time of similar to 0.14 ps, while the measured relaxation time is much longer. Our results provide a comprehensive picture of the defect-mediated excitonic relaxation and localization dynamics in monolayer MoS2.

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