文献类型： 外文期刊

作者： Pang, Qingqing ¹ ; Wang, Deyan ³ ; Wang, Xiuyan ⁴ ; Feng, Shaoguang ⁴ ; Clark, Michael B., Jr. ⁵ ; Li, Qiaowei ¹ ;

作者机构： 1.Fudan Univ, Dept Chem, Shanghai 200433, Peoples R China

2.Fudan Univ, IChEM Collaborat Innovat Ctr Chem Energy Mat, Shanghai 200433, Peoples R China

3.Rohm & Haas Elect Mat LLC, Marlborough, MA 01752 USA

4.Dow Chem China Investment Co Ltd, Shanghai Dow Ctr, Shanghai 201203, Peoples R China

5.Dow Chem Co USA, 400 Arcola Rd, Collegeville, PA 19426 USA

关键词： graphene scaffold;high-k dielectrics;metal organic oligomer;electronic materials;transfer free

期刊名称：ACS APPLIED MATERIALS & INTERFACES （ 影响因子：9.229； 五年影响因子：9.57 ）

ISSN： 1944-8244

年卷期： 2016 年 8 卷 38 期

页码：

收录情况： SCI

摘要： In situ fabrication of graphene scaffold-ZrO2 nanofilms is achieved by thermal annealing of Zr-based metal-organic oligomers on SiO2 substrates. The structural similarities of the aromatic moieties in the ligand (phenyl-, naphthyl-, anthryl-, and pyrenyl-) compared to graphene play a major role in the ordering of the graphene scaffolds obtained. The depth profiling analysis reveals ultrathin carbon-pure or carbon-rich surfaces of the graphene scaffold-ZrO2 nanofilms. The graphene scaffolds with similar to 96.0% transmittance in the visible region and 4.8 nm in thickness can be grown with this non-chemical vapor deposition method. Furthermore, the heterogeneous graphene scaffold-ZrO2 nanofilms show a low sheet resistance of 17.0 kO per square, corresponding to electrical conductivity of 3197 S m(-1). The strategy provides a facile method to fabricate graphene scaffolds directly on high-k dielectrics without transferring process, paving the way for its application in fabricating electronic devices.