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Fully Integrated Single-Inductor Multiple-Output (SIMO) DC-DC Converter in CMOS 65 nm Technology

文献类型: 会议论文

第一作者: Pablo S. Mandolesi

作者: Pablo S. Mandolesi 1 ; Fortunato Carlos Dualibe 2 ; Angel J. Soto 1 ; Esteban O. Lindstrom 1 ; Alejandro R. Oliva 1 ;

作者机构: 1.Instituto de Irivestigaciones en Ing. Eléctrica (IIIE) Alfredo Desages (UNS-CONICET).

2.Faculté Polytechnique Service d'électronique et de microélectronique Université de Mons boulevard Dolez, 31 7000 Mons, Belgium.

关键词: SoC;SIMO;CMOS

会议名称: IEEE Latin American Symposium on Circuits and Systems

主办单位:

页码: 369-372

摘要: In the nanoscale technologies, the on-chip Power Management design strategy as a part of a System on Chip (SoC) is becoming extremely important. This work presents a fully integrated SIMO converter in a CMOS 65 nm technology. Since passive components are also integrated and their values should result relatively small the converter operates at a switching frequency of 200 MHz. This version counts with a step-up and a step-down outputs, but it can be easily extended to more otuputs. A suitable control strategy for high speed and nano-scale process together with system simulation results are discused.

分类号: tp27-53

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