文献类型： 会议论文

第一作者： Yunyan Zhang

作者： Yunyan Zhang ¹ ; Martin Aagesen ² ; Ana M. Sanchez ³ ; Jiang Wu ¹ ; Richard Beanland ³ ; Thomas Ward ³ ; Dongyoung Kim ¹ ; Pamela Jurczak ¹ ; Suguo Huo ⁴ ; Huiyun Liu ¹ ;

作者机构： 1.Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom

2.Gasp Solar ApS, Gregersensvej 7, Taastrup DK-2630, Denmark

3.Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom

4.London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom

关键词： GaAsP;Nanowire;core?shell;self-catalyzed

会议名称： SPIE Conference on Quantum Dots and Nanostructures

主办单位：

页码： 9758-9.758E-4

摘要： Self-catalyzed GaAsP nanowires (NWs) have a band gap that is capable of covering the working wavelengths from green to infrared. However, the difficulties in controlling P and the complexities of the growth of ternary NWs make it challenging to fabricate them. In this work, self-catalyzed GaAsP NWs were successfully grown on Si substrates by solid-source molecular beam epitaxy and demonstrated almost stacking fault free zinc blend crystal structure, Growth of high-quality shell has been realized on the core NWs. In the shell, a quasi-3-fold composition symmetry has been observed for the first time. Moreover, these growth techniques have been successfully applied for growth on patterned Si substrates after some creative modifications such as high-temperature substrate cleaning and Ga pre-deposition. These results open up new perspectives for integrating III?V nanowire photovoltaics and visible light emitters on the silicon platform using self-catalyzed GaAsP core?shell nanowires.

分类号： N-532