EMI and switching time evolution for power RF LDMOS in chopper application after accelerated tests
文献类型： 会议论文
第一作者： M. A. Belaid
作者： M. A. Belaid 1 ; M. Tlig 1 ; J. Ben Hadj Slama 1 ;
作者机构： 1.SAGE-ENISo, University of Sousse
关键词： Rise time;Fall time;Switching;EMI;Power MOSFET devices;Ageing tests;Reliability
会议名称： International Conference on Electrical Sciences and Technologies in Maghreb
主办单位：
页码： 546-549
摘要： This paper deals a correlation of ElectroMagnetic Interference (EMI) evolution with the switching performance of power RF LDMOS (Radio Frequency Lateral Diffused Metal-Oxide-Semiconductor) devices applied to a series chopper. In addition their influences on the dynamic parameters are studied after various accelerated ageing tests (thermal and electrical). The response of these parameters and the switching waveform are described. The findings of experimental results are presented and discussed. Measurements show that important variations are obtained on the devices rise time. After ageing tests, the charge trapping in the gate oxide causes the modifications in the Miller capacity level and width result in an increase of the rise time and decreased the fall time, consequently an increase of the switching losses.
分类号： TP3-53
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