文献类型： 会议论文

第一作者： A. Jouve

作者： A. Jouve ¹ ; J. Simon ¹ ; A. Pikon ² ; H. Solak ³ ; C. Vannuffel ¹ ; J.-H. Tortai ⁴ ;

作者机构： 1.CEA/DRT/LETI, 17rue des martyrs, 38054 Grenble cedex, France

2.Rohm and Haas Company, Marlborough, MA 011752

3.Laboratory for Micro-and Nanotechnology, Paul Scherrer Institute, 38054 Grenoble cedex, France

4.CNR/LTM, 17rue des martyre, 38054 Grenoble cedex, France

关键词： Pattern collapse;Chemically Amplified resist;Adhesion;Elastic;Elastoplastic;Electron Beam Lithography;EUV Lithography

会议名称： Advances in resist technology and processing XXIII :

主办单位：

页码： 61531C-1-61531C-11

摘要： In this study we investigate the pattern collapse mechanism of dense patterns with resolution under 60nm printed in Extreme Ultra Violet (EUV-IL) and Electron Beam Lithographies (EBL). Pattern collapse occurs when physical properties of the material can't imbalanced the capillary force exerted on the pattern during the drying of the rinse liquid. In former simulation models, the height of the pattern at which collapse occurs (critical height, Hc) was predicted using either elastic deformation properties, or plasticizing limit value of the resist. Experimental observations of unstuck patterns, lead us to develop 2 new models considering the adhesion properties of the resist film on the substrate. By comparing simulated to experimental results for varying pattern pitchs printed in 2 Chemically Amplified Resists (CARS), we show that pattern collapse behaviour of EUV-IL and EBL patterns is not only ruled by rigidity or strength of the resist but can be perfectly described with equation defining the unsticking of a non bending pattern. Finally by using surfactinated solution on sub-60nm dense patterns, great improvements in Hc values and increase of process window latitude are shown. However, due to larger capillary force, this efficiency decreases with pattern pitch and appears limited on patterns width smaller than 40 nm.

分类号： N5