文献类型： 会议论文

第一作者： D. M. Lennon

作者： D. M. Lennon ¹ ; S. J. Spector ¹ ; T. H. Fedynyshyr ¹ ; T. M. Lyszczarz ¹ ; M. Rothschild ¹ ; J. Thackeray ² ; K. Spear-Alfonso ² ;

作者机构： 1.Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420

2.Rohm and Haas Electronic Materials, Marlborough, MA

关键词： electron beam lithography;hybrid lithography;193 immersion lithography

会议名称： Advances in resist materials and processing technology XXIV :

主办单位：

页码： 65190H-1-65190H-10

摘要： Combining optical and electron beam exposures on the same wafer level is an attractive approach for extending the usefulness of current generation optical tools. This technique requires high-performance hybrid resists that perform equally well with optical and e-beam tools. In this paper Rohm and Haas EPICTM 2340, a 193-nm chemically amplified photoresist, is used in a hybrid exposure role. The e-beam tool was used to pattern 45 nm half-pitch features and a 193- nm immersion stepper was used to pattern 60-nm half-pitch features in the same resist layer. The effects of processing parameters and delay times were investigated.

分类号： N5