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Hafnium oxide layer-enhanced single-walled carbon nanotube field-effect transistor-based sensing platform

文献类型: 外文期刊

作者: Meng, QingYi 1 ; Wei, Shuhua 1 ; Xu, Zhiyuan 1 ; Cao, Qiang 2 ; Xiao, Yushi 2 ; Liu, Na 2 ; Liu, Huan 2 ; Han, Gang 2 ; Zhan 1 ;

作者机构: 1.North China Univ Technol, Sch Informat Sci & Technol, Beijing 100144, Peoples R China

2.Chinese Acad Fishery Sci, Key Lab Control Qual & Safety Aquat Prod, Minist Agr, Beijing 100141, Peoples R China

3.Shanghai Ocean Univ, Shanghai 201306, Peoples R China

4.Lomonosov Moscow State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia

关键词: Copper ions; Single-walled carbon nanotubes; poly(4-vinylpyridine); HfO2 layer; Field-effect transistor

期刊名称:ANALYTICA CHIMICA ACTA ( 影响因子:6.558; 五年影响因子:6.228 )

ISSN: 0003-2670

年卷期: 2021 年 1147 卷

页码:

收录情况: SCI

摘要: Single-walled carbon nanotube-based field effect transistors (SWCHT-FETs) are ideal candidates for fabricating sensors and have been widely used for chemical sensing applications. SWCNT-FETs have low selectivity because of the environmentally sensitive electronic properties of SWCNTs, and SWCNT-FETs also show a high noise signal and poor sensitivity because of charge trapping from Si-OH hydration of the SiO2/Si substrate on the SWCNTs. Herein, poly (4-vinylpyridine) (P4VP) was used for noncovalent attachment to SWCNTs and selective binding to copper ions (Cu-2(+)). Importantly, the introduction of a hafnium-oxide (HfO2) layer through atomic layer deposition (ALD) overcame the charge trapping by SiO2 hydration and remarkably decreased the interference signal. The sensitivity of the P4VP/SWCHT/HfO2-FET sensor for Cu2+ was 7.9 mu A mu M-1, which was approximately 100 times higher than that of the P4VP/SWCHT/SiO2-FET sensor, and its limit of detection (LOD) was as low as 33 pmol L-1. Thus, the P4VP/SWCHT/HfO2-FET sensor is a promising candidate for the development of Cu2+-selective sensors and can be designed for the large-scale manufacturing of custom-made sensors in the future. (C) 2020 Elsevier B.V. All rights reserved.

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