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Effects of gamma-ray irradiation on ferroelectric properties of Pr and Mn co-substituted BiFeO3 thin films

文献类型: 外文期刊

作者: Wen, Zheng 1 ; Wu, Di 1 ; Zhu, Jiating 4 ; Li, Aidong 1 ;

作者机构: 1.Nanjing Univ, Coll Engn & Appl Sci, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

2.Nanjing Univ, Coll Engn & Appl Sci, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

3.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China

4.Jiangsu Acad Agr Sci, Inst Applicat Atom Energy, Nanjing 210014, Jiangsu, Peoples R China

关键词: BiFeO3;high-energy irradiation;ferroelectric properties;polarization switching;domain pinning

期刊名称:JOURNAL OF PHYSICS D-APPLIED PHYSICS ( 影响因子:3.207; 五年影响因子:3.041 )

ISSN: 0022-3727

年卷期: 2014 年 47 卷 4 期

页码:

收录情况: SCI

摘要: gamma-ray irradiation effects on ferroelectric properties of (Bi0.85Pr0.15)(Fe0.95Mn0.05)O-3 (BPFMO) thin films are investigated by pizeoresponse force microscopy and polarization-voltage hysteresis measurements. The irradiated BPFMO thin-film capacitors show reduced polarizations and imprinted hysteresis loops. The loss of nonvolatile polarization increases with the decrease of polarization values prior to the irradiation and the imprint of hysteresis loops depends on the direction of polarization. These are discussed in terms of separation of gamma-ray-excited electron-hole pairs by the depolarization field and subsequent charge trapping and aggregation on charged domain walls in BPFMO thin films.

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