文献类型： 会议论文

第一作者： Anatoly Bourov

作者： Anatoly Bourov ¹ ; Stewart A. Robertson ² ; Bruce W. Smith ³ ; Michael Slocum ³ ; Emil C. Piscani ³ ;

作者机构： 1.Rochester Institute of Technology, 82 Lomb Memorial Drive, Rochester, NY, USA 14623

2.Rohm and Haas Electronic Mateirlas, 455 Forest St, Marlborough, MA, USA 01752

3.Amphibian Systems, 125 Tech Park Drive, Rochester, NY, USA 14623

关键词： interference#aimmersion;lithography;photoresist;modulation

会议名称： Optical Microlithography XIX pt.2

主办单位：

页码： 61542Z-1-61542Z-6

摘要： An approach to measurement of resist CD response to image modulation and dose is presented. An empirical model with just three terms is used to describe this response, allowing for direct calculation of photoresist modulation curves. A thresholded latent image response model has been tested to describe CD response for both 90 nm and 45 nm geometry. An assumption of a linear optical image to photoresist latent image correlation is shown as adequate for the 90 nm case, while the 45 nm case demonstrates significant non-linear behavior. This failure indicates the inadequacy of a "resist blur" as a complete descriptive function and uncovers the need for an additional spread function in OPE-style resist models.

分类号： N5