文献类型： 会议论文

第一作者： Stewart A. Robertson

作者： Stewart A. Robertson ¹ ; Shintaro Yamada ¹ ; Joanne M. Leonard ¹ ;

作者机构： 1.Rohn and haas Electronic materials, Marlborough, MA

关键词： immersion lithography;lithography simulatio;diffusion co-efficients;dissolution retes

会议名称： Advances in resist technology and processing XXIII :

主办单位：

页码： 615312-1-615312-8

摘要： EPICTM 2330 photoresist is an imaging material designed for conventional dry and immersion ArF exposure, its formulation is optimized for contact hole features. Although it performs well in both imaging modes, with good profile, it is not known whether the presence of water impacts the materials fundamental imaging characteristics. Acid generation efficiency, characteristic acid diffusion length and dissolution rates are determined for EPIC 2330 under dry and immersion imaging conditions. The results show, that within measurement errors, no difference is observed for these fundamental parameters whether water is present during exposure, or not.

分类号： N5