Precise AT-to-GC Base Editing in Banana

文献类型: 外文期刊

第一作者: Wu, Shaoping

作者: Wu, Shaoping;Wu, Shaoping;Hu, Chunhua;Dou, Tongxin;Qin, Fei;Yin, Binhui;Bi, Fangcheng;Yang, Qiaosong;Yi, Ganjun;Hu, Chunhua;Dou, Tongxin;Bi, Fangcheng;Yang, Qiaosong;Yi, Ganjun;Zhu, Haocheng;Liu, Jinxing;Zhu, Haocheng;Yin, Binhui

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关键词: Banana; Adenine base editor; MaPDS; Paraffin section; Deep amplicon sequencing

期刊名称:JOURNAL OF PLANT GROWTH REGULATION ( 影响因子:4.4; 五年影响因子:4.9 )

ISSN: 0721-7595

年卷期: 2025 年

页码:

收录情况: SCI

摘要: Currently, the use of CRISPR/Cas9 gene editing technologies in plants is growing. Since Hu et al. created the CRISPR/Cas9 system in bananas in 2017, researchers have employed CRISPR/Cas9 gene editing technology to change the banana MaACO1 and MaGA20ox2 genes, resulting in novel banana germplasm banana. However, there are no reports on base editing in banana until now. In this study, adenine base editor (ABE) was implemented in banana with banana PDS (MaPDS) as the target gene, and a mutant was successfully generated. In the mutant, the leaves showed chlorosis and lesion spots. Deep amplicon sequencing analysis revealed that the fifth and sixth bases of the target sequence exhibited the AT to GC mutation, and the sixth base conversion mutation caused the amino acid to change from isoleucine to valine. Moreover, the mutation efficiency of the sixth base in the leaf sample with lesion spots was much greater than that in the adjacent normal leaf samples from the same leaf. In addition, the structure of the leaf samples was examined using paraffin section analysis. The results showed that the number of cells in the upper cuticle, upper epidermis, lower epidermis and lower cuticle of the chlorosis spot regions in the leaves of the mutant line #1 was significantly lower, by 16.89, 91.67, 14.38 and 30.69%, respectively, than that in the wild type. Taken together, these results indicated that ABE works well in banana and could provide a basis for the genetic improvement of important agronomic traits via precise base editing.

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