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Phase transition induced Raman enhancement on vanadium dioxide ( VO2) nanosheets

文献类型： 外文期刊

作者： Miao, Peng 1 ; Wu, Jie 1 ; Du, Yunchen 1 ; Sun, Yanchun 2 ; Xu, Ping 1 ;

作者机构： 1.Harbin Inst Technol, Sch Chem & Chem Engn, MIIT Key Lab Crit Mat Technol New Energy Convers, Harbin 150001, Heilongjiang, Peoples R China

2.Chinese Acad Fishery Sci, Minist Agr, Heilongjiang River Fisheries Res Inst, Lab Qual & Safety Risk Assessment Aquat Prod Harb, Harbin 150070, Heilongjiang, Peoples R China

期刊名称：JOURNAL OF MATERIALS CHEMISTRY C （ 影响因子：7.393； 五年影响因子：6.853 ）

ISSN： 2050-7526

年卷期： 2018 年 6 卷 40 期

页码：

收录情况： SCI

摘要： Semiconductor materials such as transition metal oxides and dichalcogenides have been increasingly explored as promising surface enhanced Raman scattering (SERS) platforms. This work demonstrates, for the first time, that VO2 nanosheet materials can be another SERS-active platform for molecule detection based on the chemical enhancement mechanism. A systematic study of the phase transition induced Raman enhancement on VO2 nanosheets reveals that increase in the crystal symmetry from VO2(B) to VO2(M) and to VO2(R) results in a dramatic decline in the enhancement ability of the probe molecules. On defect-rich VO2(B) nanosheets, a detection limit as low as 10(-7) M can be reached for various dye molecules, confirming VO2 nanosheets as another kind of effective SERS-active semiconductor metal oxide. This study strongly indicates that a synergetic strategy of low-dimension and low-symmetry may be a new avenue for the design of highly efficient metal oxide-based semiconductor SERS substrates.

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