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Photoconductive properties of Er-CdSe nanobelt detectors

文献类型: 外文期刊

作者: Huang, Jieqing 1 ; Tan, Qiuhong 1 ; Zhang, Zijing 4 ; Wang, Qianjin 1 ; Feng, Xiaobo 1 ; Liu, Yingkai 1 ;

作者机构: 1.Yunnan Key Lab Optoelect Informat Technol, Kunming 650500, Yunnan, Peoples R China

2.Yunnan Normal Univ, Inst Phys & Elect Informat, Kunming 650500, Yunnan, Peoples R China

3.Key Lab Yunnan Higher Educ Inst Optoelect Informa, Kunming 650500, Yunnan, Peoples R China

4.Henan Acad Agr Sci, Inst Anim Husb & Vet Sci, Zhengzhou 450002, Henan, Peoples R China

期刊名称:JOURNAL OF MATERIALS SCIENCE ( 影响因子:4.22; 五年影响因子:3.69 )

ISSN: 0022-2461

年卷期: 2019 年 54 卷 1 期

页码:

收录情况: SCI

摘要: Three kinds of devices based on single Er-doped CdSe nanobelt (Er-CdSe NB), single CdSe NB and four CdSe NBs in parallel were constructed by hard mask assisted with 10-m tungsten wire in diameter. The photoelectronic properties of three kinds of devices were investigated. It is found that the dark currents of Er-CdSe NB and CdSe NB (four CdSe NBs in parallel) are 4x10(-10) and 1.0x10(-13)A (8.92x10(-11)A). They have high I-on/I-off ratios with 2.21x10(4) and 8.97x10(5) (4.61x10(4)), respectively. The corresponding responsivity, external quantum efficiency and detectivity of Er-CdSe NB and CdSe NB (four CdSe NBs in parallel) are 2.17x10(3), 3.87x10(5) and 2.27x10(12)A/W; 3.84, 692 and 2.9x10(11); 1.59x10(2), 2.86x10(4) and 4.96x10(11)Jones. The responsivity R and external quantum of four CdSe NBs in parallel are higher by two orders of magnitude than that of single CdSe NB device. The detectivity D* of the former is twofold higher than that of the latter. In the meantime, R, and D* of Er-CdSe NB are 10-fold higher than those of four CdSe NBs in parallel. The superior performance of the Er-CdS NB device offers an avenue to develop highly sensitive photodetector applications.

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